Technical Program

Technical Program

The ASD Workshop was initiated in 2016 to provide a scientific communication channel to learn and exchange about selective deposition techniques. It has since offered a forum for open discussions between researchers from academia and industry. The meeting will include half day Tutorials (starts Sunday afternoon 1:00 p.m.) followed by the Workshop (two full days, Monday and Tuesday) at ETEC Building (University at Albany). The last day of the Workshop (ends Wednesday around 2:00 p.m.) will highlight the state of the art of SC devices and processes at NY state with invited presentation from our main industrial partners at the NY Creates’ Albany NanoTech Complex.

The 2026 Area Selective Deposition Workshop (ASD 2026) will take place March 29-April 1, 2026, at the University at Albany in New York, but it will be in two different locations:

• March 29-31, 2026: ETEC Building
• April 1, 2026: NY Creates’ Albany NanoTech Complex

View Technical Program

Special Events

Sunday Welcome Reception:
5:30 p.m.-7:00 p.m., ETEC

Monday Conference Dinner:
7:00 p.m.

Tuesday Poster Session:
5:30 p.m.-7:00 p.m., ETEC

Sunday Tutorial Speakers

“Direct Self-Assembly (DSA): From Materials to Integration”

Patricia Pimenta-Barros, CEA/LETI, France

“Selectivity in Plasma Processes”

Eric Liu, TEL TTCA, USA

“Selective Epitaxy Growth of Group IV Materials for CMOS Devices”

Joël Kanyandekwe, CEA/LETI, France

“Selective Thermal Atomic Layer Etching or Spontaneous Etching”

Marcel Junige, M.Sc., University of Colorado Boulder, USA

Monday & Tuesday Speakers

Keynote Speaker

“From Concept to Reality: The Evolution and Impact of Area Selective ALD”

Stacey Bent, Stanford University, USA

Invited Speakers

“Development of Area-Selective ALD Processes Using In Situ Optical Diagnostics”

Sumit Agarwal, Colorado School of Mines, USA

“ALD Precursor Design Through Atomic-Level Simulation”

Yusuke Asano, Matlantis Corporation, Japan

“Direct Integration of Transition Metal Dichalcogenides”

Zakaria Y. Al Balushi, University of California, Berkley, USA

“Versatile Strategies for ASD Optimization Using Super-Cycles”

Marceline Bonvalot, Grenoble Alpes University, LTM, France

“Atomic-level Healing and Sculpting: The New Frontier of Area-Selective Deposition in Memory Fabrication”

Francois Fabreguette, Micron, USA

“Enabling Area-Selective Atomic Layer Deposition through Locally Activated and Deactivated Approaches”

Woo-Hee Kim, Hanyang University ERICA, South Korea

“Accelerating Future Logic Devices with Precision Area Selective Deposition”

Yamato Tonegawa, TEL TTS, Japan

“Area-Selective ALD with Polymer Masks: Deposition Mechanisms and Trade-offs”

Katherine T. Young, Georgia Tech Research Institute, USA

Wednesday Speakers

Opening Remarks

John Iacoponi, NY Creates’ Senior Director of Technology Strategy

“Semiconductor Industry Outlook and Opportunity for A Digitized Society”

Akihisa Sekiguchi, Corporate Fellow, GM, Corporate Innovation Division, Tokyo Electron Limited (TEL)

“When Photons Meet Production: Bringing Silicon Photonics into High‑Volume CMOS Manufacturing”

Massud Aminpur, Distinguished Member of Technical Staff  Fab8, Advanced Module Engineering Globalfoundries

“IBM’s Roadmaps of Advanced Logic Technology and Packaging: The Key Process Challenges”

Kisik Choi, Senior Manager, Advanced Logic Process Integration at IBM

“Sustainable by Design: Advancing Semiconductor Manufacturing through Material Innovation”

Nathan Stafford, Group Manager for Customer Processes – Electronics R&D team, Air Liquide

“Semiconductor Equipment and Process Twins”

Weize Hu, Sr. Manager, Process Engineer in MDP (Metal Deposition Product), Applied Materials